{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521948","patent":{"patent_number":"US-11521948","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-01-30T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of manufacturing a semiconductor device, includes: preparing a support substrate having a peeling layer formed on a main surface side; partially forming a wiring layer above the peeling layer; arranging a semiconductor chip on the support substrate so that a pad of the semiconductor chip is electrically connected to the wiring layer; forming an encapsulating layer that encapsulates at least a part of the wiring layer and the semiconductor chip and is in contact with the peeling layer or a layer above the peeling layer so as to form an intermediate laminated body including the semiconductor chip, the wiring layer, and the encapsulating layer on the support substrate; cutting a peripheral portion of the support substrate after forming the intermediate laminated body; and mechanically peeling the intermediate laminated body from the support substrate with the peripheral portion cut away, with the peeling layer being as a boundary."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A method of manufacturing a semiconductor device, includes: preparing a support substrate having a peeling layer formed on a main surface side; partially forming a wiring layer above the peeling layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521948","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521948","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-11521948). https://patentable.app/patents/US-11521948","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521948","json":"https://patentable.app/api/llm-context/US-11521948","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:11:57.060Z"}