{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521957","patent":{"patent_number":"US-11521957","title":"Semiconductor device and method of manufacture","assignee":null,"inventors":[],"filing_date":"2021-07-08T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In one embodiment, a semiconductor device includes a first substrate with a transistor formed in a first active are, a first bonding pad electrically connected to the transistor and a first metal pad surrounding the first active area. A second substrate of a type that is different from the first substrate includes a passive circuit element in a second active area on a front surface, a second bonding pad electrically connected to the passive circuit element, a second metal pad surrounding the second active area, and a mounting pad on a back surface of the second substrate with a through-via electrically connecting the second bonding pad to the mounting pad. A first interconnection extends from the first bonding pad to the second bonding pad, and a second interconnection extends from the first metal pad to the second metal pad and surrounds the region through which the first interconnection extends."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacture","description":"In one embodiment, a semiconductor device includes a first substrate with a transistor formed in a first active are, a first bonding pad electrically connected to the transistor and a first metal pad ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521957","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521957","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacture\" (US-11521957). https://patentable.app/patents/US-11521957","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521957","json":"https://patentable.app/api/llm-context/US-11521957","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:24:43.071Z"}