{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521974","patent":{"patent_number":"US-11521974","title":"Memory device with different types of capacitors and method for forming the same","assignee":null,"inventors":[],"filing_date":"2020-11-16T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A memory device includes a semiconductor substrate having a first active region and a second active region adjacent to the first active region. The memory device also includes a first word line extending across the first active region and the second active region. The memory device further includes a first source/drain region in the first active region and a second source/drain region in the second active region disposed at opposite sides of the first word line. In addition, the memory device includes a first capacitor disposed over and electrically connected to the first source/drain region in the first active region, and a second capacitor disposed over and electrically connected to the second source/drain region in the second active region. The first capacitor and the second capacitor have different sizes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device with different types of capacitors and method for forming the same","description":"A memory device includes a semiconductor substrate having a first active region and a second active region adjacent to the first active region. The memory device also includes a first word line extend","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521974","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521974","citation_suggestion":"Patentable. \"Memory device with different types of capacitors and method for forming the same\" (US-11521974). https://patentable.app/patents/US-11521974","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521974","json":"https://patentable.app/api/llm-context/US-11521974","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:25:49.824Z"}