{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11521985","patent":{"patent_number":"US-11521985","title":"Electro-thermal method to manufacture monocrystalline vertically oriented silicon channels for three-dimensional (3D) NAND memories","assignee":null,"inventors":[],"filing_date":"2020-12-31T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of forming a multitude of vertical NAND memory cells, includes, in part, forming a multitude of insulating materials on a silicon substrate, forming a trench in the insulating materials to expose a surface of the silicon substrate, depositing a layer of polysilicon along the sidewalls of the trench, filling the trench with oxide, forming a metal layer above the trench, and forming a mono-crystalline channel for the NAND memory cells by applying a voltage between the silicon substrate and the metal layer to cause the polysilicon sidewalls to melt. The melted polysilicon sidewalls is enable to recrystallize into the mono-crystalline channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electro-thermal method to manufacture monocrystalline vertically oriented silicon channels for three-dimensional (3D) NAND memories","description":"A method of forming a multitude of vertical NAND memory cells, includes, in part, forming a multitude of insulating materials on a silicon substrate, forming a trench in the insulating materials to ex","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11521985","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11521985","citation_suggestion":"Patentable. \"Electro-thermal method to manufacture monocrystalline vertically oriented silicon channels for three-dimensional (3D) NAND memories\" (US-11521985). https://patentable.app/patents/US-11521985","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11521985","json":"https://patentable.app/api/llm-context/US-11521985","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:42:21.407Z"}