{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522046","patent":{"patent_number":"US-11522046","title":"Memory device and method of fabricating the memory device","assignee":null,"inventors":[],"filing_date":"2021-08-13T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The method for forming a semiconductor structure includes forming a semiconductor stack over a substrate, wherein the semiconductor stack includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternatively stacked, patterning the semiconductor stack to form a first fin and a second fin adjacent to the first fin, and removing the second semiconductor layers to obtain a first group of nanosheets over the first fin and a second group of nanosheets over the second fin, wherein a lateral spacing between one of the nanosheets in the first group and a corresponding nanosheet in the second group is smaller than a vertical spacing between each of the nanosheets in the first group."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device and method of fabricating the memory device","description":"The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The method for forming a semiconductor structure includes forming a semiconductor stack ov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522046","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522046","citation_suggestion":"Patentable. \"Memory device and method of fabricating the memory device\" (US-11522046). https://patentable.app/patents/US-11522046","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522046","json":"https://patentable.app/api/llm-context/US-11522046","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:15:49.769Z"}