{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522049","patent":{"patent_number":"US-11522049","title":"Diffusion barrier layer for source and drain structures to increase transistor performance","assignee":null,"inventors":[],"filing_date":"2020-10-07T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Various embodiments of the present disclosure are directed towards a semiconductor device including a gate electrode over a semiconductor substrate. An epitaxial source/drain layer is disposed on the semiconductor substrate and is laterally adjacent to the gate electrode. The epitaxial source/drain layer comprises a first dopant. A diffusion barrier layer is between the epitaxial source/drain layer and the semiconductor substrate. The diffusion barrier layer comprises a barrier dopant that is different from the first dopant."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Diffusion barrier layer for source and drain structures to increase transistor performance","description":"Various embodiments of the present disclosure are directed towards a semiconductor device including a gate electrode over a semiconductor substrate. An epitaxial source/drain layer is disposed on the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522049","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522049","citation_suggestion":"Patentable. \"Diffusion barrier layer for source and drain structures to increase transistor performance\" (US-11522049). https://patentable.app/patents/US-11522049","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522049","json":"https://patentable.app/api/llm-context/US-11522049","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:22:35.970Z"}