{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522060","patent":{"patent_number":"US-11522060","title":"Epitaxial layers on contact electrodes for thin- film transistors","assignee":null,"inventors":[],"filing_date":"2018-09-26T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"Embodiments herein describe techniques for a thin-film transistor (TFT) above a substrate. The transistor includes a contact electrode having a conductive material above the substrate, an epitaxial layer above the contact electrode, and a channel layer including a channel material above the epitaxial layer and above the contact electrode. The channel layer is in contact at least partially with the epitaxial layer. A conduction band of the channel material and a conduction band of a material of the epitaxial layer are substantially aligned with an energy level of the conductive material of the contact electrode. A bandgap of the material of the epitaxial layer is smaller than a bandgap of the channel material. Furthermore, a gate electrode is above the channel layer, and separated from the channel layer by a gate dielectric layer. Other embodiments may be described and/or claimed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial layers on contact electrodes for thin- film transistors","description":"Embodiments herein describe techniques for a thin-film transistor (TFT) above a substrate. The transistor includes a contact electrode having a conductive material above the substrate, an epitaxial la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522060","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522060","citation_suggestion":"Patentable. \"Epitaxial layers on contact electrodes for thin- film transistors\" (US-11522060). https://patentable.app/patents/US-11522060","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522060","json":"https://patentable.app/api/llm-context/US-11522060","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:17:14.669Z"}