{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522061","patent":{"patent_number":"US-11522061","title":"Semiconductor structure with protection layer and conductor extending through protection layer","assignee":null,"inventors":[],"filing_date":"2019-10-18T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductor, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductor is electrically connected to the source drain structure. The protection layer is present between the conductor and the first spacer and on a top surface of the first gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with protection layer and conductor extending through protection layer","description":"A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductor, and at least one protection l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522061","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522061","citation_suggestion":"Patentable. \"Semiconductor structure with protection layer and conductor extending through protection layer\" (US-11522061). https://patentable.app/patents/US-11522061","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522061","json":"https://patentable.app/api/llm-context/US-11522061","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:59:16.266Z"}