{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522065","patent":{"patent_number":"US-11522065","title":"Gate etch back with reduced loading effect","assignee":null,"inventors":[],"filing_date":"2021-03-19T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes following steps. First and second gate electrodes are formed over a substrate, with an ILD layer between the first and second gate electrodes. A first etch operation is performed to etch the first and second gate electrodes. A sacrificial layer is formed across the etched first and second gate electrodes and the ILD layer. A second etch operation is performed to etch the sacrificial layer and the etched the first and second gate electrodes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate etch back with reduced loading effect","description":"A method includes following steps. First and second gate electrodes are formed over a substrate, with an ILD layer between the first and second gate electrodes. A first etch operation is performed to ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522065","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522065","citation_suggestion":"Patentable. \"Gate etch back with reduced loading effect\" (US-11522065). https://patentable.app/patents/US-11522065","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522065","json":"https://patentable.app/api/llm-context/US-11522065","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:09:30.014Z"}