{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522066","patent":{"patent_number":"US-11522066","title":"Sidewall passivation for HEMT devices","assignee":null,"inventors":[],"filing_date":"2020-12-08T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a semiconductor substrate. The heterojunction structure includes a binary III/V semiconductor layer is a first III-nitride material and a ternary III/V semiconductor layer arranged over the binary III/V semiconductor layer and is a second III-nitride material. Source and drain regions are arranged over the ternary III/V semiconductor layer. A gate structure is arranged over the heterojunction structure and arranged between the source and drain regions. The gate structure is a third III-nitride material. A first passivation layer directly contacts an entire sidewall surface of the gate structure and is a fourth III-nitride material. The entire sidewall surface has no dangling bond. A second passivation layer is conformally disposed along the first passivation layer, the second passivation layer has no physical contact with the gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sidewall passivation for HEMT devices","description":"Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a semiconductor substrate. The heterojunction st","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522066","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522066","citation_suggestion":"Patentable. \"Sidewall passivation for HEMT devices\" (US-11522066). https://patentable.app/patents/US-11522066","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522066","json":"https://patentable.app/api/llm-context/US-11522066","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:17:15.261Z"}