{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522070","patent":{"patent_number":"US-11522070","title":"Manufacturing method of low temperature poly-silicon substrate (LTPS)","assignee":null,"inventors":[],"filing_date":"2018-10-08T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":7,"abstract":"A manufacturing method of a low temperature poly-silicon (LTPS) array substrate is described. The LTPS array substrate includes a metal light-shielding layer, a buffer layer, a polycrystalline silicon layer, a gate insulating and interlayer insulating layer, a gate line layer, and a source and drain electrode layer. The method adopts a one-time chemical vapor deposition process to form a gate insulator and interlayer insulating layer. A gate line trench is formed in the gate insulating layer and the interlayer insulating layer, thereby reducing the thickness of the LTPS array substrate film layer and the process steps."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of low temperature poly-silicon substrate (LTPS)","description":"A manufacturing method of a low temperature poly-silicon (LTPS) array substrate is described. The LTPS array substrate includes a metal light-shielding layer, a buffer layer, a polycrystalline silicon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522070","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522070","citation_suggestion":"Patentable. \"Manufacturing method of low temperature poly-silicon substrate (LTPS)\" (US-11522070). https://patentable.app/patents/US-11522070","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522070","json":"https://patentable.app/api/llm-context/US-11522070","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:23:35.489Z"}