{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522075","patent":{"patent_number":"US-11522075","title":"Semiconductor device and method of manufacturing same","assignee":null,"inventors":[],"filing_date":"2021-01-28T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":4,"abstract":"A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a higher impurity concentration than an impurity concentration of the first semiconductor region, the second semiconductor region being provided on a first principal surface of the first semiconductor region, a third semiconductor region of a second conductivity type provided on an upper surface of the second semiconductor region, the third semiconductor region being doped with an impurity in accordance with an impurity concentration profile including peaks along a film thickness direction, a fourth semiconductor region of the first conductivity type provided on an upper surface of the third semiconductor region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing same","description":"A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a h","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522075","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522075","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing same\" (US-11522075). https://patentable.app/patents/US-11522075","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522075","json":"https://patentable.app/api/llm-context/US-11522075","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:16.944Z"}