{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522085","patent":{"patent_number":"US-11522085","title":"Ferroelectric semiconductor device and method","assignee":null,"inventors":[],"filing_date":"2019-10-18T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A ferroelectric semiconductor device and method are described herein. The method includes performing a diffusion anneal process to drive elements of a dopant film through an amorphous silicon layer and into a gate dielectric layer over a fin to form a doped gate dielectric layer with a gradient depth profile of dopant concentrations. The doped gate dielectric layer is crystallized during a post-cap anneal process to form a gradient depth profile of ferroelectric properties within the crystallized gate dielectric layer. A metal gate electrode is formed over the crystallized gate dielectric layer to obtain a ferroelectric transistor with multi-ferroelectric properties between the gate electrode and the channel. The ferroelectric transistor may be used in deep neural network (DNN) applications."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ferroelectric semiconductor device and method","description":"A ferroelectric semiconductor device and method are described herein. The method includes performing a diffusion anneal process to drive elements of a dopant film through an amorphous silicon layer an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522085","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522085","citation_suggestion":"Patentable. \"Ferroelectric semiconductor device and method\" (US-11522085). https://patentable.app/patents/US-11522085","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522085","json":"https://patentable.app/api/llm-context/US-11522085","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:49:59.773Z"}