{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522087","patent":{"patent_number":"US-11522087","title":"Epitaxial oxide integrated circuit","assignee":null,"inventors":[],"filing_date":"2022-04-08T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":27,"abstract":"The present disclosure describes epitaxial oxide integrated circuits. In some embodiments, an integrated circuit comprises: a field effect transistor (FET), comprising: a substrate comprising a first oxide material; an epitaxial buried ground plane on the substrate and comprising a second oxide material; an epitaxial buried oxide layer on the epitaxial buried ground plane and comprising a third oxide material; an epitaxial semiconductor layer on the epitaxial buried oxide layer and comprising a fourth oxide material with a first bandgap; a gate layer on the epitaxial semiconductor layer and comprising a fifth oxide material with a second bandgap; electrical contacts; and a waveguide coupled to the field effect transistor. The waveguide can comprise: the epitaxial buried ground plane; the epitaxial buried oxide layer; and a signal conductor, wherein the epitaxial buried oxide layer is between the signal conductor and the epitaxial buried ground plane."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial oxide integrated circuit","description":"The present disclosure describes epitaxial oxide integrated circuits. In some embodiments, an integrated circuit comprises: a field effect transistor (FET), comprising: a substrate comprising a first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522087","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522087","citation_suggestion":"Patentable. \"Epitaxial oxide integrated circuit\" (US-11522087). https://patentable.app/patents/US-11522087","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522087","json":"https://patentable.app/api/llm-context/US-11522087","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:58:06.210Z"}