{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522103","patent":{"patent_number":"US-11522103","title":"Epitaxial oxide materials, structures, and devices","assignee":null,"inventors":[],"filing_date":"2022-02-22T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":40,"abstract":"The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Nix1Mgy1Zn1−x1−yl)2GeO4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1. In some cases, either: x1≠x2 and y1=y2; x1=x2 and y1≠y2; or x1≠x2 and y1≠y2. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Mgx1Zn1−x1)(Aly1Ga1−y1)2O4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial oxide materials, structures, and devices","description":"The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522103","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522103","citation_suggestion":"Patentable. \"Epitaxial oxide materials, structures, and devices\" (US-11522103). https://patentable.app/patents/US-11522103","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522103","json":"https://patentable.app/api/llm-context/US-11522103","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:30:07.582Z"}