{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11522145","patent":{"patent_number":"US-11522145","title":"Method for manufacturing transistor comprising removal of oxide film","assignee":null,"inventors":[],"filing_date":"2021-02-05T00:00:00.000Z","publication_date":"2022-12-06T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A method for manufacturing a transistor being a bottom-gate transistor is provided. The method for manufacturing a transistor includes a step of forming a first metal layer 32 on an insulator layer 20 provided on a substrate 10 including a gate electrode, a step of applying a resist onto the first metal layer 32, and patterning the first metal layer 32 by a photolithographic method, an oxide film removal step of removing an oxide film 26 formed on the patterned first metal layer 32, and a step of forming a source electrode and a drain electrode by forming a second metal layer 42 on the first metal layer 32. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing transistor comprising removal of oxide film","description":"A method for manufacturing a transistor being a bottom-gate transistor is provided. The method for manufacturing a transistor includes a step of forming a first metal layer 32 on an insulator layer 20","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11522145","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11522145","citation_suggestion":"Patentable. \"Method for manufacturing transistor comprising removal of oxide film\" (US-11522145). https://patentable.app/patents/US-11522145","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11522145","json":"https://patentable.app/api/llm-context/US-11522145","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:23:18.405Z"}