{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527293","patent":{"patent_number":"US-11527293","title":"Nonvolatile memory device and method of programming in the same","assignee":null,"inventors":[],"filing_date":"2021-06-08T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device and method of programming in the same","description":"A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527293","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527293","citation_suggestion":"Patentable. \"Nonvolatile memory device and method of programming in the same\" (US-11527293). https://patentable.app/patents/US-11527293","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527293","json":"https://patentable.app/api/llm-context/US-11527293","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:19:10.772Z"}