{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527406","patent":{"patent_number":"US-11527406","title":"Trench etching process for photoresist line roughness improvement","assignee":null,"inventors":[],"filing_date":"2020-01-14T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of forming a semiconductor device structure is provided. The method includes forming a resist structure over a substrate. The resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer. The hydrogen plasma treatment is configured to smooth sidewalls of the trench without etching the ARC layer. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench etching process for photoresist line roughness improvement","description":"A method of forming a semiconductor device structure is provided. The method includes forming a resist structure over a substrate. The resist structure includes an anti-reflective coating (ARC) layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527406","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527406","citation_suggestion":"Patentable. \"Trench etching process for photoresist line roughness improvement\" (US-11527406). https://patentable.app/patents/US-11527406","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527406","json":"https://patentable.app/api/llm-context/US-11527406","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:34:41.332Z"}