{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527413","patent":{"patent_number":"US-11527413","title":"Cyclic plasma etch process","assignee":null,"inventors":[],"filing_date":"2021-01-29T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for processing a substrate includes performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: causing chemical reactions with the surface of the substrate by exposing a surface of the substrate to fluorine radicals extracted from a first gas discharge plasma formed using a first gaseous mixture including a non-polymerizing fluorine compound; cooling the substrate and concurrently removing residual gaseous byproducts by flowing a second gaseous mixture over the substrate, and at the same time, suppressing the chemical reactions with the surface of the substrate; and performing a plasma surface modification process by exposing the surface of the substrate to hydrogen radicals extracted from a second gas discharge plasma formed using a third gaseous mixture including gases including nitrogen and hydrogen."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cyclic plasma etch process","description":"A method for processing a substrate includes performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: causing chemical reactions w","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527413","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527413","citation_suggestion":"Patentable. \"Cyclic plasma etch process\" (US-11527413). https://patentable.app/patents/US-11527413","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527413","json":"https://patentable.app/api/llm-context/US-11527413","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:23:06.054Z"}