{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527416","patent":{"patent_number":"US-11527416","title":"Method for producing a 3D semiconductor device and structure including metal layers","assignee":null,"inventors":[],"filing_date":"2022-06-22T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming a plurality of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing a first etch step; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth metal layer above; forming a connection to the second metal layer which includes a via through the second level; forming a fifth metal layer above, where some second transistors include a metal gate, and the fifth metal layer thickness is at least 50% greater than the second metal layer thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a 3D semiconductor device and structure including metal layers","description":"A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming a plurality of first transistors in and/or on the first level with a first metal la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527416","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527416","citation_suggestion":"Patentable. \"Method for producing a 3D semiconductor device and structure including metal layers\" (US-11527416). https://patentable.app/patents/US-11527416","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527416","json":"https://patentable.app/api/llm-context/US-11527416","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:08:48.524Z"}