{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527432","patent":{"patent_number":"US-11527432","title":"Bulk substrates with a self-aligned buried polycrystalline layer","assignee":null,"inventors":[],"filing_date":"2020-11-02T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bulk substrates with a self-aligned buried polycrystalline layer","description":"Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527432","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527432","citation_suggestion":"Patentable. \"Bulk substrates with a self-aligned buried polycrystalline layer\" (US-11527432). https://patentable.app/patents/US-11527432","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527432","json":"https://patentable.app/api/llm-context/US-11527432","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:51:54.746Z"}