{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527473","patent":{"patent_number":"US-11527473","title":"Semiconductor memory device including capacitor","assignee":null,"inventors":[],"filing_date":"2020-09-30T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A three-dimensional (3D) semiconductor memory device includes a peripheral logic structure disposed on a first substrate, a horizontal semiconductor layer disposed on a second substrate, a plurality of stack structures on the horizontal semiconductor layer in a first direction, wherein the plurality of stack structures include a memory cell region and a capacitor region, a plurality of electrode isolation regions extending in the first direction and a second direction and configured to separate the plurality of stack structures to be connected to the horizontal semiconductor layer and a plurality of through-via structures having a first side connected to a through channel contact through at least one metal pad, wherein a capacitor is formed between each of electrode pads and at least one of electrode isolation regions in the plurality of stack structures or at least one of the plurality of through-via structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device including capacitor","description":"A three-dimensional (3D) semiconductor memory device includes a peripheral logic structure disposed on a first substrate, a horizontal semiconductor layer disposed on a second substrate, a plurality o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527473","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527473","citation_suggestion":"Patentable. \"Semiconductor memory device including capacitor\" (US-11527473). https://patentable.app/patents/US-11527473","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527473","json":"https://patentable.app/api/llm-context/US-11527473","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:24:55.842Z"}