{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527475","patent":{"patent_number":"US-11527475","title":"Memory devices and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2020-09-30T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","G11C","H01L"],"num_claims":15,"abstract":"A memory device includes a substrate, a bit line, a first insulating film, a second insulating film, a third insulating film, and a contact. The bit line is disposed over the substrate. The first insulating film is disposed on a sidewall of the bit line. The second insulating film is disposed on the first insulating film and is made of a different material than the first insulating film. The third insulating film is disposed on the second insulating film and is made of a different material than the second insulating film. The top surfaces of the second insulating film and the third insulating film are lower than the top surface of the first insulating film. The contact is disposed over the substrate and adjacent to the bit line. The width of the lower portion of the contact is less than the width of the upper portion of the contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory devices and methods for forming the same","description":"A memory device includes a substrate, a bit line, a first insulating film, a second insulating film, a third insulating film, and a contact. The bit line is disposed over the substrate. The first insu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527475","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527475","citation_suggestion":"Patentable. \"Memory devices and methods for forming the same\" (US-11527475). https://patentable.app/patents/US-11527475","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527475","json":"https://patentable.app/api/llm-context/US-11527475","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:06:35.676Z"}