{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527478","patent":{"patent_number":"US-11527478","title":"Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2020-12-15T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device according to an embodiment includes: a semiconductor substrate; a conductor including tungsten (W) or molybdenum (Mo); a first film provided between the conductor and the semiconductor substrate and including titanium (Ti) and silicon (Si); an insulating layer surrounding the conductor; and a second film provided between the conductor and the insulating layer, surrounding the conductor, and including titanium (Ti) and nitrogen (N). A first distance between the semiconductor substrate and an end portion of the second film on a side opposite to the semiconductor substrate is smaller than a second distance between the semiconductor substrate and an end portion of the conductor on a side opposite to the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method","description":"A semiconductor device according to an embodiment includes: a semiconductor substrate; a conductor including tungsten (W) or molybdenum (Mo); a first film provided between the conductor and the semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527478","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527478","citation_suggestion":"Patentable. \"Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method\" (US-11527478). https://patentable.app/patents/US-11527478","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527478","json":"https://patentable.app/api/llm-context/US-11527478","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:58.754Z"}