{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527493","patent":{"patent_number":"US-11527493","title":"Method for preparing semiconductor device structure with air gap structure","assignee":null,"inventors":[],"filing_date":"2021-11-30T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","G11C","G11C","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present disclosure provides a method for preparing a semiconductor device structure. The method includes forming a first metal plug, a second metal plug, a third metal plug, and a fourth metal plug over a semiconductor substrate; forming an energy removable liner covering the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug; performing an etching process to remove a portion of the energy removable layer from the substrate, while remaining an energy removable block between the first metal plug and the second metal plug in the cell region; forming a dielectric layer covering the energy removable block and the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug; performing a thermal treating process to transform the energy removable layer into a first air gap structure including a first air gap enclosed by liner layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for preparing semiconductor device structure with air gap structure","description":"The present disclosure provides a method for preparing a semiconductor device structure. The method includes forming a first metal plug, a second metal plug, a third metal plug, and a fourth metal plu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527493","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527493","citation_suggestion":"Patentable. \"Method for preparing semiconductor device structure with air gap structure\" (US-11527493). https://patentable.app/patents/US-11527493","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527493","json":"https://patentable.app/api/llm-context/US-11527493","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:33:49.529Z"}