{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527500","patent":{"patent_number":"US-11527500","title":"Semiconductor structure containing multilayer bonding pads and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2020-12-10T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die that includes second semiconductor devices, and a second pad-level dielectric layer embedding second bonding pads that includes a respective second pad base portion. Each of the first bonding pads includes a respective first pad base portion and a respective first metal alloy material portion having a higher coefficient of thermal expansion (CTE) than the respective first pad base portion. Each of the second bonding pads is bonded to a respective one of the first bonding pads."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure containing multilayer bonding pads and methods of forming the same","description":"A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527500","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527500","citation_suggestion":"Patentable. \"Semiconductor structure containing multilayer bonding pads and methods of forming the same\" (US-11527500). https://patentable.app/patents/US-11527500","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527500","json":"https://patentable.app/api/llm-context/US-11527500","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:24:15.983Z"}