{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527503","patent":{"patent_number":"US-11527503","title":"Method for manufacturing semiconductor package","assignee":null,"inventors":[],"filing_date":"2020-01-23T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor package","description":"The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527503","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527503","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor package\" (US-11527503). https://patentable.app/patents/US-11527503","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527503","json":"https://patentable.app/api/llm-context/US-11527503","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:20:33.744Z"}