{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527543","patent":{"patent_number":"US-11527543","title":"Polysilicon removal in word line contact region of memory devices","assignee":null,"inventors":[],"filing_date":"2020-06-30T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"The present disclosure describes a patterning process for a strap region in a memory cell for the removal of material between polysilicon lines. The patterning process includes depositing a first hard mask layer in a divot formed on a top portion of a polysilicon layer interposed between a first polysilicon gate structure and a second polysilicon gate; depositing a second hard mask layer on the first hard mask layer. The patterning process also includes performing a first etch to remove the second hard mask layer and a portion of the second hard mask layer from the divot, performing a second etch to remove the second hard mask layer from the divot; and performing a third etch to remove the polysilicon layer not covered by the first and second hard mask layers to form a separation between the first polysilicon gate structure and the second polysilicon structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Polysilicon removal in word line contact region of memory devices","description":"The present disclosure describes a patterning process for a strap region in a memory cell for the removal of material between polysilicon lines. The patterning process includes depositing a first hard","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527543","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527543","citation_suggestion":"Patentable. \"Polysilicon removal in word line contact region of memory devices\" (US-11527543). https://patentable.app/patents/US-11527543","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527543","json":"https://patentable.app/api/llm-context/US-11527543","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:25:15.910Z"}