{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527610","patent":{"patent_number":"US-11527610","title":"CMOS compatible isolation leakage improvements in gallium nitride transistors","assignee":null,"inventors":[],"filing_date":"2018-06-05T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"An integrated circuit structure comprises a silicon substrate and a III-nitride (III-N) substrate over the silicon substrate. A first III-N transistor and a second III-N transistor is on the III-N substrate. An insulator structure is formed in the III-N substrate between the first III-N transistor and the second III-N, wherein the insulator structure comprises one of: a shallow trench filled with an oxide, nitride or low-K dielectric; or a first gap adjacent to the first III-N transistor and a second gap adjacent to the second III-N transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"CMOS compatible isolation leakage improvements in gallium nitride transistors","description":"An integrated circuit structure comprises a silicon substrate and a III-nitride (III-N) substrate over the silicon substrate. A first III-N transistor and a second III-N transistor is on the III-N sub","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527610","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527610","citation_suggestion":"Patentable. \"CMOS compatible isolation leakage improvements in gallium nitride transistors\" (US-11527610). https://patentable.app/patents/US-11527610","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527610","json":"https://patentable.app/api/llm-context/US-11527610","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:48:26.598Z"}