{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527622","patent":{"patent_number":"US-11527622","title":"Effective work function tuning via silicide induced interface dipole modulation for metal gates","assignee":null,"inventors":[],"filing_date":"2021-01-08T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["B82Y","H01L"],"num_claims":20,"abstract":"A method includes providing a structure having a substrate and a channel layer over the substrate; forming a high-k gate dielectric layer over the channel layer; forming a work function metal layer over the high-k gate dielectric layer; forming a silicide layer over the work function metal layer; annealing the structure such that a first portion of the work function metal layer that interfaces with the high-k gate dielectric layer is doped with silicon elements from the silicide layer; removing the silicide layer; and forming a bulk metal layer over the work function metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Effective work function tuning via silicide induced interface dipole modulation for metal gates","description":"A method includes providing a structure having a substrate and a channel layer over the substrate; forming a high-k gate dielectric layer over the channel layer; forming a work function metal layer ov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527622","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527622","citation_suggestion":"Patentable. \"Effective work function tuning via silicide induced interface dipole modulation for metal gates\" (US-11527622). https://patentable.app/patents/US-11527622","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527622","json":"https://patentable.app/api/llm-context/US-11527622","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:20:16.883Z"}