{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527629","patent":{"patent_number":"US-11527629","title":"Field effect transistor","assignee":null,"inventors":[],"filing_date":"2018-04-13T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A field-effect transistor includes a gate electrode formed on an electron supply layer thereon, a source electrode and a drain electrode thereon; and also the field-effect transistor includes an insulation film for covering the electron supply layer, and an opening portion of the insulation film, having trapezoidal prism's oblique contour faces, being provided in a region to form the gate electrode in the insulation film. It is so arranged that the gate electrode is made to have a Schottky junction with respect to a region where the electron supply layer is exposed through the opening portion, and also that the trapezoidal prism's oblique contour faces each formed by the opening portion have inclination angles in a range from 25 degrees to 75 degrees with respect to a surface of the electron supply layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field effect transistor","description":"A field-effect transistor includes a gate electrode formed on an electron supply layer thereon, a source electrode and a drain electrode thereon; and also the field-effect transistor includes an insul","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527629","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527629","citation_suggestion":"Patentable. \"Field effect transistor\" (US-11527629). https://patentable.app/patents/US-11527629","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527629","json":"https://patentable.app/api/llm-context/US-11527629","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:35:37.083Z"}