{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527634","patent":{"patent_number":"US-11527634","title":"Silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-04-19T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"An SBD of a JBS structure has on a front side of a semiconductor substrate, nickel silicide films in ohmic contact with p-type regions and a FLR, and a titanium film forming a Schottky junction with an n−-type drift region. A thickness of each of the nickel silicide films is in a range from 300 nm to 700 nm. The nickel silicide films each has a first portion protruding from the front surface of the semiconductor substrate in a direction away from the front surface of the semiconductor substrate, and a second portion protruding in the semiconductor substrate from the front surface of the semiconductor substrate in a depth direction. A thickness of the first portion is equal to a thickness of the second portion. A width of the second portion is wider than a width of the first portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device","description":"An SBD of a JBS structure has on a front side of a semiconductor substrate, nickel silicide films in ohmic contact with p-type regions and a FLR, and a titanium film forming a Schottky junction with a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527634","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527634","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device\" (US-11527634). https://patentable.app/patents/US-11527634","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527634","json":"https://patentable.app/api/llm-context/US-11527634","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:38:51.533Z"}