{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527637","patent":{"patent_number":"US-11527637","title":"Ion implantation to control formation of MOSFET trench-bottom oxide","assignee":null,"inventors":[],"filing_date":"2021-03-01T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, forming an oxide layer over the device structure including within each of the plurality of trenches and over a top surface of the device structure, and implanting a first portion of the oxide layer using an ion implant delivered to the device structure at a non-zero angle of inclination relative to a perpendicular extending from a top surface of the device structure. The method may further include removing the oxide layer from the top surface of the device structure and from a sidewall of each of the plurality of trenches, wherein a second portion of the oxide layer remains along a bottom of each of the plurality of trenches."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ion implantation to control formation of MOSFET trench-bottom oxide","description":"Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, forming an oxide layer over the device struc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527637","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527637","citation_suggestion":"Patentable. \"Ion implantation to control formation of MOSFET trench-bottom oxide\" (US-11527637). https://patentable.app/patents/US-11527637","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527637","json":"https://patentable.app/api/llm-context/US-11527637","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:39:18.813Z"}