{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527641","patent":{"patent_number":"US-11527641","title":"High-electron-mobility transistor with high voltage endurance capability and preparation method thereof","assignee":null,"inventors":[],"filing_date":"2020-03-02T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":26,"abstract":"The present disclosure relates to semiconductor power devices, and in particular, to a high-electron-mobility transistor (HEMT) with high voltage endurance capability and a preparation method thereof. The high-electron-mobility transistor with high voltage endurance capability includes a gate electrode, a source electrode, a drain electrode, a barrier layer, a P-type nitride semiconductor layer and a substrate, wherein the P-type nitride semiconductor layer is between the barrier layer and the substrate, which is insufficient to significantly deplete a two-dimensional electron gas in a channel except a gate stack, the source electrode is in electrical contact with the P-type nitride semiconductor layer, and the source electrode and the drain electrode are both in electrical contact with the two-dimensional electron gas."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-electron-mobility transistor with high voltage endurance capability and preparation method thereof","description":"The present disclosure relates to semiconductor power devices, and in particular, to a high-electron-mobility transistor (HEMT) with high voltage endurance capability and a preparation method thereof.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527641","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527641","citation_suggestion":"Patentable. \"High-electron-mobility transistor with high voltage endurance capability and preparation method thereof\" (US-11527641). https://patentable.app/patents/US-11527641","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527641","json":"https://patentable.app/api/llm-context/US-11527641","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:22:48.487Z"}