{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527650","patent":{"patent_number":"US-11527650","title":"FinFET device having a source/drain region with a multi-sloped undersurface","assignee":null,"inventors":[],"filing_date":"2020-08-12T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A device includes a first fin and a second fin extending from a substrate, the first fin including a first recess and the second fin including a second recess, an isolation region surrounding the first fin and surrounding the second fin, a gate stack over the first fin and the second fin, and a source/drain region in the first recess and in the second recess, the source/drain region adjacent the gate stack, wherein the source/drain region includes a bottom surface extending from the first fin to the second fin, wherein a first portion of the bottom surface that is below a first height above the isolation region has a first slope, and wherein a second portion of the bottom surface that is above the first height has a second slope that is greater than the first slope."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device having a source/drain region with a multi-sloped undersurface","description":"A device includes a first fin and a second fin extending from a substrate, the first fin including a first recess and the second fin including a second recess, an isolation region surrounding the firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527650","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527650","citation_suggestion":"Patentable. \"FinFET device having a source/drain region with a multi-sloped undersurface\" (US-11527650). https://patentable.app/patents/US-11527650","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527650","json":"https://patentable.app/api/llm-context/US-11527650","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:08:25.727Z"}