{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527659","patent":{"patent_number":"US-11527659","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-10-14T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional semiconductor material. The first two-dimensional metallic contact is disposed at a side of the channel region and includes a two-dimensional metallic material. The second two-dimensional metallic contact is disposed at an opposite side of the channel region and includes the two-dimensional metallic material. The gate structure is disposed on the channel region in between the first and second two-dimensional metallic contacts. The first metal contact is disposed at an opposite side of the first two-dimensional metallic contact with respect to the channel region. The second metal contact is disposed at an opposite side of the second two-dimensional metallic contact with respect to the channel region. The first and second two-dimensional metallic contacts contact sideways the channel region to form lateral semiconductor-metallic junctions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527659","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527659","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-11527659). https://patentable.app/patents/US-11527659","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527659","json":"https://patentable.app/api/llm-context/US-11527659","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:00:19.376Z"}