{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527708","patent":{"patent_number":"US-11527708","title":"Ultra-fast magnetic random access memory having a composite SOT-MTJ structure","assignee":null,"inventors":[],"filing_date":"2020-04-15T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"An ultra-fast magnetic random access memory (MRAM) comprises a three terminal composite SOT magnetic tunneling junction (CSOT-MTJ) element including a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ultra-fast magnetic random access memory having a composite SOT-MTJ structure","description":"An ultra-fast magnetic random access memory (MRAM) comprises a three terminal composite SOT magnetic tunneling junction (CSOT-MTJ) element including a magnetic flux guide (MFG) having a very high magn","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527708","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527708","citation_suggestion":"Patentable. \"Ultra-fast magnetic random access memory having a composite SOT-MTJ structure\" (US-11527708). https://patentable.app/patents/US-11527708","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527708","json":"https://patentable.app/api/llm-context/US-11527708","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:22:25.383Z"}