{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11527709","patent":{"patent_number":"US-11527709","title":"SOT multibit memory cell","assignee":null,"inventors":[],"filing_date":"2020-09-21T00:00:00.000Z","publication_date":"2022-12-13T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"The disclosed technology relates to a multibit memory cell. In one aspect, the multibit memory cell includes a plurality of spin-orbit torque (SOT) tracks, plurality of magnetic tunnel junctions (MTJs), an electrically conductive path connecting a first MTJ and a second MTJ together, and a plurality of terminals. The plurality of terminals can be configured to provide a first SOT write current to the first MTJ, a second SOT write current to the second MTJ, and at least one of: the second SOT write current to a third MTJ, a third SOT write current to the third MTJ, and a spin transfer torque (STT) write current through the third MTJ. The junction resistances of the various MTJs are such that a combined multibit memory state of the MTJs is readable by a read current through all the MTJs in series."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SOT multibit memory cell","description":"The disclosed technology relates to a multibit memory cell. In one aspect, the multibit memory cell includes a plurality of spin-orbit torque (SOT) tracks, plurality of magnetic tunnel junctions (MTJs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11527709","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11527709","citation_suggestion":"Patentable. \"SOT multibit memory cell\" (US-11527709). https://patentable.app/patents/US-11527709","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11527709","json":"https://patentable.app/api/llm-context/US-11527709","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:08:22.696Z"}