{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11530491","patent":{"patent_number":"US-11530491","title":"Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-06-03T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. In a direction parallel to a central region, a ratio of a standard deviation of a carrier concentration of the silicon carbide layer to an average value of the carrier concentration of the silicon carbide layer is less than 5%. The average value of the carrier concentration is more than or equal to 1×1014 cm−3 and less than or equal to 5×1016 cm−3. In the direction parallel to the central region, a ratio of a standard deviation of a thickness of the silicon carbide layer to an average value of the thickness of the silicon carbide layer is less than 5%. The central region has an arithmetic mean roughness (Sa) of less than or equal to 1 nm. The central region has a haze of less than or equal to 50."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device","description":"A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. In a direction parallel to a central region, a ratio of a standard deviation of a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11530491","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11530491","citation_suggestion":"Patentable. \"Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device\" (US-11530491). https://patentable.app/patents/US-11530491","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11530491","json":"https://patentable.app/api/llm-context/US-11530491","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:08:59.278Z"}