{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11531057","patent":{"patent_number":"US-11531057","title":"Through-silicon via crack detecting apparatus, detecting method, and semiconductor device fabrication method having the same","assignee":null,"inventors":[],"filing_date":"2020-12-01T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":13,"abstract":"The present disclosure relates to a through-silicon via (TSV) crack detecting apparatus, a detecting method, and a fabricating method of the semiconductor device. The TSV crack detecting apparatus includes a test TSV, a conductive liner, a second dielectric liner, a first contact, and a second contact. The test TSV is disposed within a semiconductor substrate, including a conductive channel and a first dielectric liner for isolating the conductive channel and the semiconductor substrate. The conductive liner surrounds the first dielectric liner. The second dielectric liner surrounds the conductive liner. The first contact is connected to the conductive channel. The second contact is connected to the conductive liner. A voltage difference between the first contact and the second contact is used to determine whether a TSV within a predetermined range to the test TSV has a crack based on a conductive state between the first contact and the second contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Through-silicon via crack detecting apparatus, detecting method, and semiconductor device fabrication method having the same","description":"The present disclosure relates to a through-silicon via (TSV) crack detecting apparatus, a detecting method, and a fabricating method of the semiconductor device. The TSV crack detecting apparatus inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11531057","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11531057","citation_suggestion":"Patentable. \"Through-silicon via crack detecting apparatus, detecting method, and semiconductor device fabrication method having the same\" (US-11531057). https://patentable.app/patents/US-11531057","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11531057","json":"https://patentable.app/api/llm-context/US-11531057","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:54:40.167Z"}