{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11531606","patent":{"patent_number":"US-11531606","title":"Memory apparatus capable of autonomously detecting and repairing fail word line and memory system including the same","assignee":null,"inventors":[],"filing_date":"2020-09-24T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["G06F","G11C","G06F","G11C","G11C","G06F","G11C"],"num_claims":20,"abstract":"A memory apparatus comprising: a cell array comprising multiple first and second word lines, a fuse array configured to substitute a selection word line of the multiple first word lines with the multiple second word lines, a fail determination unit configured to determine, as a fail word line, a word line matched with a first condition during an access operation for the multiple first word lines and to determine a fail grade of the fail word line based on a second condition, an information storage unit configured to store a physical address, fail grade and access count of the fail word line as determination information for the fail word line, and a rupture operation unit configured to select the selection word line from the fail word lines based on a result of the analysis of the determination information, and perform rupturing the selection word line into the fuse array."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory apparatus capable of autonomously detecting and repairing fail word line and memory system including the same","description":"A memory apparatus comprising: a cell array comprising multiple first and second word lines, a fuse array configured to substitute a selection word line of the multiple first word lines with the multi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11531606","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11531606","citation_suggestion":"Patentable. \"Memory apparatus capable of autonomously detecting and repairing fail word line and memory system including the same\" (US-11531606). https://patentable.app/patents/US-11531606","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11531606","json":"https://patentable.app/api/llm-context/US-11531606","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:59:40.596Z"}