{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532339","patent":{"patent_number":"US-11532339","title":"Method for forming semiconductor memory structure","assignee":null,"inventors":[],"filing_date":"2020-06-15T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A method for forming a semiconductor memory structure is provided. The method includes following operations. An interlayer is formed over a first ferromagnetic layer, wherein forming the interlayer includes following operations. A first metal film is formed by sputtering a first target material. A first oxygen treatment is conducted to the first metal film to form a first metal oxide film. A second metal oxide film is formed over the first metal oxide film by sputtering a second target material different from the first target material. A second metal film is formed by sputtering a third target material. A second oxygen treatment is conducted to the second metal film to form a third metal oxide film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor memory structure","description":"A method for forming a semiconductor memory structure is provided. The method includes following operations. An interlayer is formed over a first ferromagnetic layer, wherein forming the interlayer in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532339","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532339","citation_suggestion":"Patentable. \"Method for forming semiconductor memory structure\" (US-11532339). https://patentable.app/patents/US-11532339","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532339","json":"https://patentable.app/api/llm-context/US-11532339","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:13:55.576Z"}