{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532345","patent":{"patent_number":"US-11532345","title":"Self-reference sensing for memory cells","assignee":null,"inventors":[],"filing_date":"2020-11-13T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["G11C","G06F","G11C","G11C","G11C","G11C","G11C"],"num_claims":7,"abstract":"Methods, systems, and apparatuses for self-referencing sensing schemes are described. A cell having two transistors, or other switching components, and one capacitor, such as a ferroelectric capacitor, may be sensed using a reference value that is specific to the cell. The cell may be read and sampled via one access line, and the cell may be used to generate a reference voltage and sampled via another access line. For instance, a first access line of a cell may be connected to one read voltage while a second access line of the cell is isolated from a voltage source; then the second access line may be connected to another read voltage while the first access line is isolate from a voltage source. The resulting voltages on the respective access lines may be compared to each other and a logic value of the cell determined from the comparison."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-reference sensing for memory cells","description":"Methods, systems, and apparatuses for self-referencing sensing schemes are described. A cell having two transistors, or other switching components, and one capacitor, such as a ferroelectric capacitor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532345","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532345","citation_suggestion":"Patentable. \"Self-reference sensing for memory cells\" (US-11532345). https://patentable.app/patents/US-11532345","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532345","json":"https://patentable.app/api/llm-context/US-11532345","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:25:45.992Z"}