{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532439","patent":{"patent_number":"US-11532439","title":"Ultra-dense ferroelectric memory with self-aligned patterning","assignee":null,"inventors":[],"filing_date":"2019-03-07T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"Described is an ultra-dense ferroelectric memory. The memory is fabricated using a patterning method by that applies atomic layer deposition with selective dry and/or wet etch to increase memory density at a given via opening. A ferroelectric capacitor in one example comprises: a first structure (e.g., first electrode) comprising metal; a second structure (e.g., a second electrode) comprising metal; and a third structure comprising ferroelectric material, wherein the third structure is between and adjacent to the first and second structures, wherein a portion of the third structure is interdigitated with the first and second structures to increase surface area of the third structure. The increased surface area allows for higher memory density."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ultra-dense ferroelectric memory with self-aligned patterning","description":"Described is an ultra-dense ferroelectric memory. The memory is fabricated using a patterning method by that applies atomic layer deposition with selective dry and/or wet etch to increase memory densi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532439","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532439","citation_suggestion":"Patentable. \"Ultra-dense ferroelectric memory with self-aligned patterning\" (US-11532439). https://patentable.app/patents/US-11532439","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532439","json":"https://patentable.app/api/llm-context/US-11532439","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:01:20.214Z"}