{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532480","patent":{"patent_number":"US-11532480","title":"Methods of forming contact features in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2021-05-24T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes an isolation feature disposed over a semiconductor substrate, a semiconductor fin disposed over the semiconductor substrate and adjacent to the isolation feature, a source/drain (S/D) feature disposed over the semiconductor substrate and apart from the isolation feature, an interlayer dielectric (ILD) layer disposed over the isolation feature and the S/D feature, a first contact plug disposed in the ILD layer and over the isolation feature, a second contact plug disposed in the ILD layer and over the S/D feature, and a dielectric layer between surfaces of the first contact plug and the ILD layer and between a sidewall of the second contact plug and the ILD layer, where a bottom surface of the second contact plug is free of the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming contact features in semiconductor devices","description":"A semiconductor structure includes an isolation feature disposed over a semiconductor substrate, a semiconductor fin disposed over the semiconductor substrate and adjacent to the isolation feature, a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532480","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532480","citation_suggestion":"Patentable. \"Methods of forming contact features in semiconductor devices\" (US-11532480). https://patentable.app/patents/US-11532480","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532480","json":"https://patentable.app/api/llm-context/US-11532480","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:57:42.057Z"}