{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532513","patent":{"patent_number":"US-11532513","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2020-09-28T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method for forming a semiconductor structure includes providing a substrate, including a first region and a second region adjacent to the first region; forming a first dielectric layer on the substrate in the first region and the second region; and forming a plurality of first plug structures in the first dielectric layer. The top surface of each first plug structure is exposed by the first dielectric layer. The method further includes forming a first conductive layer on the first dielectric layer of the second region; forming a second dielectric layer on the first dielectric layer of the first region and on the first conductive layer of the second region; and forming a plurality of second plug structures in the second dielectric layer of the first region. The bottom surface of each second plug structure is in contact with the top surface of a first plug structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"A method for forming a semiconductor structure includes providing a substrate, including a first region and a second region adjacent to the first region; forming a first dielectric layer on the substr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532513","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532513","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-11532513). https://patentable.app/patents/US-11532513","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532513","json":"https://patentable.app/api/llm-context/US-11532513","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:25:36.609Z"}