{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532521","patent":{"patent_number":"US-11532521","title":"Dual channel gate all around transistor device and fabrication methods thereof","assignee":null,"inventors":[],"filing_date":"2020-12-07T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a first fin, which includes a first plurality of suspended nanostructures vertically stacked over one another, each of the first plurality of suspended nanostructure having a center portion that has a first cross section, and a second fin, which includes a second plurality of suspended nanostructures vertically stacked over one another, the first plurality of suspended nanostructures and the second plurality of suspended nanostructures having different material compositions, each of the second plurality of suspended nanostructure having a center portion that has a second cross section, wherein a shape or an area of the first cross section is different from that of the second cross section."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual channel gate all around transistor device and fabrication methods thereof","description":"A semiconductor structure includes a first fin, which includes a first plurality of suspended nanostructures vertically stacked over one another, each of the first plurality of suspended nanostructure","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532521","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532521","citation_suggestion":"Patentable. \"Dual channel gate all around transistor device and fabrication methods thereof\" (US-11532521). https://patentable.app/patents/US-11532521","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532521","json":"https://patentable.app/api/llm-context/US-11532521","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:16:00.477Z"}