{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532549","patent":{"patent_number":"US-11532549","title":"Two 2D capping layers on interconnect conductive structure to increase interconnect structure reliability","assignee":null,"inventors":[],"filing_date":"2020-11-13T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. A first interconnect conductive structure extends through the first interconnect dielectric layer. A first capping layer is arranged over the first interconnect conductive structure, and a second capping layer is arranged over the first capping layer. The first capping layer includes a first two-dimensional material that is different than a second two-dimensional material of the second capping layer. An etch stop layer is arranged over the first interconnect dielectric layer and the second capping layer. The integrated chip further includes a second interconnect dielectric layer arranged over the etch stop layer and a second interconnect conductive structure extending through the second interconnect dielectric layer and the etch stop layer to contact the first interconnect conductive structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Two 2D capping layers on interconnect conductive structure to increase interconnect structure reliability","description":"In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. A first interconnect conductive structure exten","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532549","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532549","citation_suggestion":"Patentable. \"Two 2D capping layers on interconnect conductive structure to increase interconnect structure reliability\" (US-11532549). https://patentable.app/patents/US-11532549","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532549","json":"https://patentable.app/api/llm-context/US-11532549","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:35:00.420Z"}