{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532550","patent":{"patent_number":"US-11532550","title":"Semiconductor device structure having a multi-layer conductive feature and method making the same","assignee":null,"inventors":[],"filing_date":"2020-05-15T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a method of forming a semiconductor device structure. The method includes forming a trench in a dielectric layer on a semiconductor substrate; forming a bottom metal feature of a first metal in a lower portion of the trench by a selective deposition; depositing a barrier layer in an upper portion of the trench, the barrier layer directly contacting both a top surface of the bottom metal feature and sidewalls of the dielectric layer; and forming a top metal feature of a second metal on the barrier layer, filling in the upper portion of the trench, wherein the second metal is different from the first metal in composition."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure having a multi-layer conductive feature and method making the same","description":"The present disclosure provides a method of forming a semiconductor device structure. The method includes forming a trench in a dielectric layer on a semiconductor substrate; forming a bottom metal fe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532550","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532550","citation_suggestion":"Patentable. \"Semiconductor device structure having a multi-layer conductive feature and method making the same\" (US-11532550). https://patentable.app/patents/US-11532550","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532550","json":"https://patentable.app/api/llm-context/US-11532550","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:35:06.431Z"}