{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11532558","patent":{"patent_number":"US-11532558","title":"Metallization barrier structures for bonded integrated circuit interfaces","assignee":null,"inventors":[],"filing_date":"2019-09-27T00:00:00.000Z","publication_date":"2022-12-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metallization barrier structures for bonded integrated circuit interfaces","description":"Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11532558","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11532558","citation_suggestion":"Patentable. \"Metallization barrier structures for bonded integrated circuit interfaces\" (US-11532558). https://patentable.app/patents/US-11532558","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11532558","json":"https://patentable.app/api/llm-context/US-11532558","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:33:37.199Z"}